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Model VI30100S-E3/4W
Description High voltage Trench MOS barrier Schottky rectifier with ultra-low VF=0.39 V IF = 5 A High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A
Product QR code
Brand: Vishay Semiconductor
Packaging TO-262-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
4.75  yuan 4.75yuan
5+:
$ 6.4058
25+:
$ 5.9313
50+:
$ 5.5991
100+:
$ 5.4568
500+:
$ 5.3619
2500+:
$ 5.2432
5000+:
$ 5.1958
10000+:
$ 5.1246
Quantity
5+
25+
50+
100+
500+
Price
$6.4058
$5.9313
$5.5991
$5.4568
$5.3619
Price $ 6.4058 $ 5.9313 $ 5.5991 $ 5.4568 $ 5.3619
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6007) Minimum order quantity(5)
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Technical parameters/output current: ≤30.0 A

Technical parameters/forward voltage: 910mV @30A

Technical parameters/polarity: Standard

Technical parameters/forward current: 30 A

Technical parameters/Maximum forward surge current (Ifsm): 250 A

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): 40 ℃

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-262-3

External dimensions/length: 10.45 mm

External dimensions/width: 4.7 mm

External dimensions/height: 8.89 mm

External dimensions/packaging: TO-262-3

Physical parameters/operating temperature: 40℃ ~ 150℃

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
VI30100SG-E3/4W VI30100SG-E3/4W VISHAY 类似代替 TO-262
高压Trench MOS势垒肖特基整流器超低VF = 0.437 V在IF = 5 A High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A
PDF
VI30100SHM3/4W VI30100SHM3/4W Vishay Semiconductor 完全替代 TO-262-3
整流器 RECOMMENDED ALT 78-V35PW10HM3/I
PDF

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