Technical parameters/frequency: 1.88 GHz
Technical parameters/rated current: 10 µA
Technical parameters/halogen-free state: Halogen Free
Technical parameters/output power: 50 W
Technical parameters/gain: 19 dB
Technical parameters/test current: 1.8 A
Technical parameters/operating temperature (Max): 225 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/rated voltage: 65 V
Technical parameters/power supply voltage: 28 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 7
Encapsulation parameters/Encapsulation: NI-780S-6
External dimensions/packaging: NI-780S-6
Physical parameters/operating temperature: -40℃ ~ 225℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AFT18S230SR5
|
NXP | 完全替代 | NI-780S-6 |
RF Power Transistor,1805 to 1880MHz, 207W, Typ Gain in dB is 19 @ 1880MHz, 28V, LDMOS, SOT1799
|
||
AFT18S230SR5
|
Freescale | 完全替代 | NI-780S-6 |
RF Power Transistor,1805 to 1880MHz, 207W, Typ Gain in dB is 19 @ 1880MHz, 28V, LDMOS, SOT1799
|
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