Technical parameters/output current: ≤8.00 A
Technical parameters/forward voltage: 680mV @8A
Technical parameters/polarity: Standard
Technical parameters/forward voltage (Max): 680mV @8A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -40 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: PowerDFN-3
External dimensions/length: 6.15 mm
External dimensions/width: 4.75 mm
External dimensions/height: 1.2 mm
External dimensions/packaging: PowerDFN-3
Physical parameters/operating temperature: -40℃ ~ 150℃
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
V8P10-E3/87A
|
Vishay Semiconductor | 完全替代 | PowerDFN-3 |
高电流密度表面贴装Trench MOS势垒肖特基整流器 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
|
||
V8P10HM3/86A
|
VISHAY | 类似代替 | TO-277 |
TMBS - Trench MOS 势垒肖特基整流器，高达 20A，Vishay Semiconductor Vishay 的 Trench MOS 势垒肖特基 (TMBS) 整流器系列包含专利 Trench 结构。 与平面肖特基整流器相比，TMBS 整流器可提供多个优势。 工作电压为 45V 及更高时平面肖特基整流器就失去了其快速转换速度的优势，且低正向压降到极度程度。 专利型 TMBS 结构通过少量缩减向漂移区域的载体注入来解决这些问题，从而最大程度减少积累电荷并提高转换速度。 ### 特点 专利 Trench 结构 提高交流/直流开关模式电源和直流/直流转换器的效率 高功率密度和低正向电压 ### 肖特基整流器，Vishay Semiconductor
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