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Model V60100PW-M3/4W
Description TMBS - Trench MOS Barrier Schottky rectifier, 30A to 80A, Vishay Semiconductor's Trench MOS Barrier Schottky (TMBS) rectifier series includes patented Trench structures. Compared with planar Schottky rectifiers, TMBS rectifiers can provide multiple advantages. When the working voltage is 45V or higher, the planar Schottky rectifier loses its advantage of fast conversion speed and the low forward voltage drop reaches an extreme level. The patented TMBS structure solves these problems by reducing the injection of carriers into the drift region to the greatest extent possible, thereby minimizing the accumulation of charges and improving conversion speed. The patented Trench structure improves the efficiency of AC/DC switch mode power supplies and DC/DC converters with high power density and low forward voltage. Features: Schottky rectifier, Vishay Semiconductor
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Brand: Vishay Semiconductor
Packaging TO-3-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
10.92  yuan 10.92yuan
5+:
$ 12.7706
50+:
$ 12.2248
200+:
$ 11.9192
500+:
$ 11.8428
1000+:
$ 11.7664
2500+:
$ 11.6791
5000+:
$ 11.6245
7500+:
$ 11.5699
Quantity
5+
50+
200+
500+
1000+
Price
$12.7706
$12.2248
$11.9192
$11.8428
$11.7664
Price $ 12.7706 $ 12.2248 $ 11.9192 $ 11.8428 $ 11.7664
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9691) Minimum order quantity(5)
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Technical parameters/forward voltage: 0.86 V

Technical parameters/forward current: 30 A

Technical parameters/Maximum forward surge current (Ifsm): 350 A

Technical parameters/forward voltage (Max): 860mV @30A

Technical parameters/forward current (Max): 60 A

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -40 ℃

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-3-3

External dimensions/length: 16.38 mm

External dimensions/width: 4.45 mm

External dimensions/height: 21.34 mm

External dimensions/packaging: TO-3-3

Physical parameters/operating temperature: 40℃ ~ 150℃

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
V60100P-E3/45 V60100P-E3/45 LiteOn 功能相似 TO-247
双高压Trench MOS势垒肖特基整流器超低VF = 0.456 V在IF = 10 A Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.456 V at IF = 10 A
V60100P-E3/45 V60100P-E3/45 VISHAY 功能相似 TO-247-3
双高压Trench MOS势垒肖特基整流器超低VF = 0.456 V在IF = 10 A Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.456 V at IF = 10 A
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