Technical parameters/power supply current: 17.5 mA
Technical parameters/number of circuits: 1
Technical parameters/dissipated power: 1020 mW
Technical parameters/bandwidth: 150 MHz
Technical parameters/conversion rate: 650 V/μs
Technical parameters/gain bandwidth product: 340 MHz
Technical parameters/input compensation voltage: 1.1 mV
Technical parameters/input bias current: 4.3 µA
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/3dB bandwidth: 150 MHz
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
THS4151ID
|
TI | 类似代替 | SOIC-8 |
Texas Instruments ### 差分放大器,Texas Instruments
|
||
THS4151IDR
|
TI | 完全替代 | SOIC-8 |
SP Amp DIFF AMP Single ±16.5V/33V 8Pin SOIC T/R
|
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