Chip AI consultant
Technical parameters/power supply current: 4.9 mA
Technical parameters/number of circuits: 2
Technical parameters/number of channels: 2
Technical parameters/dissipated power: 1.32 W
Technical parameters/common mode rejection ratio: 56 dB
Technical parameters/Input compensation drift: 10.0 µV/K
Technical parameters/bandwidth: 110 MHz
Technical parameters/conversion rate: 1.55 kV/μs
Technical parameters/gain bandwidth product: 103 MHz
Technical parameters/input compensation voltage: 3 mV
Technical parameters/input bias current: 330 nA
Technical parameters/available channels: D
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/3dB bandwidth: 110 MHz
Technical parameters/dissipated power (Max): 1320 mW
Technical parameters/Common Mode Rejection Ratio (Min): 56 dB
Technical parameters/power supply voltage (Max): 30 V
Technical parameters/power supply voltage (Min): 10 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
THS3112CD
|
TI | 类似代替 | SOIC-8 |
双路、低噪声、高输出电流、110MHz 放大器 8-SOIC 0 to 70
|
||
THS3112CDR
|
TI | 类似代替 | SOIC-8 |
高速运算放大器 Dual Lo-Noise High Output Current
|
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