Technical parameters/drain source voltage (Vds): 200 V
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Product Catalog: MOS(Field Effect Transistor
Other/continuous drain current (Id) (at 25 ° C): 64A(Tc)
Other/leakage source voltage (Vdss): 200V
Other/gate source threshold voltage: 5V @ 250uA
Other/leakage source conduction resistance: 32 mΩ @ 30A,10V
Other/Type: N channel
Other/maximum power dissipation (Ta): 263W(Tc)
Other/Product Code: C358113
Other/Packaging Specifications: TO-220FB-3L
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