Technical parameters/rated voltage (DC): -50.0 V
Technical parameters/rated current: -175 mA
Technical parameters/drain source resistance: 10.0 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 625 mW
Technical parameters/input capacitance: 40.0 pF
Technical parameters/drain source voltage (Vds): 50 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 175 mA
Technical parameters/rise time: 10 ns
Technical parameters/Input capacitance (Ciss): 40pF @25V(Vds)
Technical parameters/rated power (Max): 625 mW
Technical parameters/descent time: 10 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 4.77 mm
External dimensions/width: 2.41 mm
External dimensions/height: 4.01 mm
External dimensions/packaging: TO-92-3
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape, Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSS123TA
|
Diodes Zetex | 功能相似 | SOT-23-3 |
DIODES INC. BSS123TA 晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 V, 2.2 V
|
||
ZVN2106A
|
Diodes Zetex | 功能相似 | TO-92-3 |
DIODES INC. ZVN2106A 晶体管, MOSFET, N沟道, 450 mA, 60 V, 2 ohm, 10 V, 2.4 V
|
||
ZVN2106A
|
Diodes | 功能相似 | TO-92-3 |
DIODES INC. ZVN2106A 晶体管, MOSFET, N沟道, 450 mA, 60 V, 2 ohm, 10 V, 2.4 V
|
||
|
|
Zetex | 功能相似 | TO-92-3 |
DIODES INC. ZVN2106A 晶体管, MOSFET, N沟道, 450 mA, 60 V, 2 ohm, 10 V, 2.4 V
|
||
ZVN4206A
|
Zetex | 功能相似 | TO-92-3 |
ZVN4206A 系列 60 V 1 Ohm N 沟道 增强模式 垂直 DMOS FET - TO-92
|
||
ZVN4206A
|
Diodes Zetex | 功能相似 | TO-92-3 |
ZVN4206A 系列 60 V 1 Ohm N 沟道 增强模式 垂直 DMOS FET - TO-92
|
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