Technical parameters/rated voltage (DC): 25.0 V
Technical parameters/rated current: 5.00 A
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 1.2 W
Technical parameters/gain bandwidth product: 100 MHz
Technical parameters/breakdown voltage (collector emitter): 25 V
Technical parameters/maximum allowable collector current: 5A
Technical parameters/minimum current amplification factor (hFE): 300 @1A, 1V
Technical parameters/Maximum current amplification factor (hFE): 300 @10mA, 1V
Technical parameters/rated power (Max): 1.2 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 1200 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 4.77 mm
External dimensions/width: 2.41 mm
External dimensions/height: 4.01 mm
External dimensions/packaging: TO-92-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 200℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Zetex | 类似代替 |
DIODES INC. ZTX869 单晶体管 双极, NPN, 25 V, 100 MHz, 1.2 W, 5 A, 450 hFE
|
|||
ZTX869
|
Diodes Zetex | 类似代替 | E-Line |
DIODES INC. ZTX869 单晶体管 双极, NPN, 25 V, 100 MHz, 1.2 W, 5 A, 450 hFE
|
||
ZTX869
|
Diodes | 类似代替 | TO-92-3 |
DIODES INC. ZTX869 单晶体管 双极, NPN, 25 V, 100 MHz, 1.2 W, 5 A, 450 hFE
|
||
ZTX869STOA
|
Vishay Semiconductor | 类似代替 | E-Line-3 |
双极晶体管 - 双极结型晶体管(BJT) NPN Big Chip SELine
|
||
ZTX869STOA
|
Diodes Zetex | 类似代替 | TO-92-3 |
双极晶体管 - 双极结型晶体管(BJT) NPN Big Chip SELine
|
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