Technical parameters/rated voltage (DC): -15.0 V
Technical parameters/rated current: -3.00 A
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 1000 mW
Technical parameters/breakdown voltage (collector emitter): 15 V
Technical parameters/maximum allowable collector current: 3A
Technical parameters/minimum current amplification factor (hFE): 500 @10mA, 2V
Technical parameters/rated power (Max): 1 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: E-Line
External dimensions/packaging: E-Line
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 200℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ZTX788BSTZ
|
Diodes | 完全替代 | E-Line-3 |
PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
|
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