Technical parameters/Maximum current amplification factor (hFE): 500 @10mA, 2V
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-92
External dimensions/width: 2.41 mm
External dimensions/packaging: TO-92
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ZTX788BSTZ
|
Diodes | 完全替代 | E-Line-3 |
PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review