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Model ZTX415STOA
Description Bipolar Transistor - Bipolar Junction Transistor (BJT) NPN Avalanche
Product QR code
Brand: Diodes
Packaging E-Line-3
Delivery time
Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7717) Minimum order quantity(1)
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Technical parameters/polarity: NPN

Technical parameters/dissipated power: 680 mW

Technical parameters/breakdown voltage (collector emitter): 100 V

Technical parameters/maximum allowable collector current: 0.5A

Technical parameters/minimum current amplification factor (hFE): 25 @10mA, 10V

Technical parameters/Maximum current amplification factor (hFE): 25 @10mA, 10V

Technical parameters/rated power (Max): 680 mW

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: E-Line-3

External dimensions/length: 4.77 mm

External dimensions/width: 2.41 mm

External dimensions/height: 4.01 mm

External dimensions/packaging: E-Line-3

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Obsolete

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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