Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 5.00 A
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 1200 mW
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 5A
Technical parameters/minimum current amplification factor (hFE): 100 @1A, 1V
Technical parameters/rated power (Max): 1.2 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1200 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: E-Line-3
External dimensions/packaging: E-Line-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FZT849
|
Vishay Semiconductor | 功能相似 | SOT-223 |
单晶体管 双极, NPN, 30 V, 100 MHz, 3 W, 7 A, 200 hFE
|
||
FZT849
|
Diodes | 功能相似 | SOT-223 |
单晶体管 双极, NPN, 30 V, 100 MHz, 3 W, 7 A, 200 hFE
|
||
FZT849
|
Kexin | 功能相似 |
单晶体管 双极, NPN, 30 V, 100 MHz, 3 W, 7 A, 200 hFE
|
|||
ZTX849
|
Diodes Zetex | 类似代替 | TO-92-3 |
DIODES INC. ZTX849 单晶体管 双极, NPN, 30 V, 100 MHz, 1.2 W, 5 A, 200 hFE
|
||
|
|
Zetex | 类似代替 | TO-92 |
DIODES INC. ZTX849 单晶体管 双极, NPN, 30 V, 100 MHz, 1.2 W, 5 A, 200 hFE
|
||
ZTX849
|
Diodes | 类似代替 | E-Line-3 |
DIODES INC. ZTX849 单晶体管 双极, NPN, 30 V, 100 MHz, 1.2 W, 5 A, 200 hFE
|
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