Technical parameters/rated power: 1.0 W
Encapsulation parameters/Encapsulation: DO-213AB
External dimensions/packaging: DO-213AB
Other/reverse voltage Vr: 15.2
Other/Zener impedance Zzt: 750 Ohms
Other/Series: ZM47
Other/IZK (MA): 0.25
Other/Test current It (mA): 12.5
Other/ ZZK@IZK (Ω): 750
Other/reverse leakage current Ir: 45uA @ 225V
Other/working temperature: -55℃~175℃
Other/Packaging/Shell: DO-213AB/LL41
Other/Power: 1W
Other/Zener voltage Vz: 20V
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SMAJ4747A-TP
|
Micro Commercial Components | 功能相似 | DO-214AC-2 |
SMAJ4747A 系列 1 W 20 V 100 mA 表面贴装 齐纳二极管 - DO-214AC
|
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SML4747A-E3/61
|
Vishay Semiconductor | 类似代替 | DO-214AC |
Diode Zener Single 20V 5% 1W 2Pin SMA T/R
|
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SML4747A-E3/61
|
VISHAY | 类似代替 | DO-214AC |
Diode Zener Single 20V 5% 1W 2Pin SMA T/R
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ZM4747A-GS08
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LiteOn | 功能相似 | MELF Glass |
1W,ZM47xxA 系列,Vishay Semiconductor 硅平面齐纳二极管(电源) 适用于稳定和削波电路的应用,带有高额定功率 标准齐纳电压容差为 ±5% 符合 AEC-Q101 ### 齐纳二极管,Vishay Semiconductor
|
||
ZM4747A-GS08
|
Vishay Siliconix | 功能相似 |
1W,ZM47xxA 系列,Vishay Semiconductor 硅平面齐纳二极管(电源) 适用于稳定和削波电路的应用,带有高额定功率 标准齐纳电压容差为 ±5% 符合 AEC-Q101 ### 齐纳二极管,Vishay Semiconductor
|
|||
ZM4747A-GS08
|
Vishay Semiconductor | 功能相似 | DO-213AB-2 |
1W,ZM47xxA 系列,Vishay Semiconductor 硅平面齐纳二极管(电源) 适用于稳定和削波电路的应用,带有高额定功率 标准齐纳电压容差为 ±5% 符合 AEC-Q101 ### 齐纳二极管,Vishay Semiconductor
|
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