Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Other/maximum source drain voltage Vds Drain Source Voltage: 60V
Other/Maximum Gate Source Voltage Vgs (±) Gate Source Voltage: 10v
Other/Maximum Drain Current Id Drain Current: 2A
Other/source drain on resistance Ω Rds D Ω/Ohmin Sou Ω/Ohmce On State Ω/Ohmesis: 0.22Ω/Ohm @1A,4V
Other/turn-on voltage Vgs (th) Gate Source Threshold Voltage: 0.4-1.3V
Other/dissipative power Pd Power Dissipation: 1W
Other/Specification PDF: __
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N7002-7-F
|
Multicomp | 功能相似 | SOT-23 |
2N7002-7-F 编带
|
||
BSS131
|
Infineon | 功能相似 | SOT-23-3 |
INFINEON BSS131 晶体管, MOSFET, N沟道, 100 mA, 240 V, 7.7 ohm, 10 V, 1.4 V
|
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BSS138
|
NCE | 功能相似 |
BSS138 N沟道MOSFET 50V 220mA/0.22A SOT-23/SC-59 marking/标记 SS 高速开关/无二次击穿
|
|||
|
|
Blue Rocket Electronics | 功能相似 | SOT-23 |
BSS138 N沟道MOSFET 50V 220mA/0.22A SOT-23/SC-59 marking/标记 SS 高速开关/无二次击穿
|
||
BSS138
|
Fairchild | 功能相似 | SOT-23-3 |
BSS138 N沟道MOSFET 50V 220mA/0.22A SOT-23/SC-59 marking/标记 SS 高速开关/无二次击穿
|
||
BSS138
|
ON Semiconductor | 功能相似 | SOT-23-3 |
BSS138 N沟道MOSFET 50V 220mA/0.22A SOT-23/SC-59 marking/标记 SS 高速开关/无二次击穿
|
||
BSS138
|
SHIKUES | 功能相似 | SOT-23-3 |
BSS138 N沟道MOSFET 50V 220mA/0.22A SOT-23/SC-59 marking/标记 SS 高速开关/无二次击穿
|
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