Technical parameters/polarity: PNP
Technical parameters/dissipated power: 2.75 W
Technical parameters/gain bandwidth product: 140 MHz
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 2A
Technical parameters/minimum current amplification factor (hFE): 100 @500mA, 2V
Technical parameters/rated power (Max): 2.75 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-223-8
External dimensions/length: 6.7 mm
External dimensions/width: 3.7 mm
External dimensions/height: 1.6 mm
External dimensions/packaging: SOT-223-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ZDT751TA
|
Diodes | 功能相似 | SOT-223-8 |
双极晶体管 - 双极结型晶体管(BJT) Dual 60V PNP
|
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