Technical parameters/drain source voltage (Vds): 60 V
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Product Catalog: MOS(Field Effect Transistor
Other/continuous drain current (Id) (at 25 ° C): 230A(Tc)
Other/leakage source voltage (Vdss): 60V
Other/gate source threshold voltage: 4V @ 250uA
Other/leakage source conduction resistance: 3 mΩ @ 115A,10V
Other/Type: N channel
Other/maximum power dissipation (Ta): 258W(Tc)
Other/Product Code: C358108
Other/Packaging Specifications: TO-220FB-3L
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