Technical parameters/frequency: 50 MHz
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 0.15 W
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 100 @100mA, 1V
Technical parameters/rated power (Max): 150 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 150 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SC-70-3
External dimensions/packaging: SC-70-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBTA56WT1G
|
ON Semiconductor | 类似代替 | SC-70-3 |
ON SEMICONDUCTOR MMBTA56WT1G Bipolar (BJT) Single Transistor, AEC-Q101, PNP, -80 V, 50 MHz, 150 mW, -500 mA, 100 hFE 新
|
||
MMSTA56-7-F
|
Diodes | 功能相似 | SOT-323 |
MMSTA56 系列 80 V 500 mA PNP 表面贴装 小信号 晶体管 -SOT-323-3
|
||
SMMBTA56WT1G
|
ON Semiconductor | 完全替代 | SC-70-3 |
SC-70 PNP 80V 0.5A
|
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