Technical parameters/forward voltage: 1.1 V
Technical parameters/dissipated power: 372 W
Technical parameters/reverse recovery time: 45 ns
Technical parameters/Maximum reverse voltage (Vrrm): 200 V
Technical parameters/forward current: 280 A
Technical parameters/Maximum forward surge current (Ifsm): 1.7 kA
Technical parameters/maximum reverse leakage current (Ir): 2 uA
Technical parameters/forward voltage (Max): 1.1 V
Technical parameters/forward current (Max): 175 A
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 372000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-227
External dimensions/length: 38.3 mm
External dimensions/width: 25.7 mm
External dimensions/height: 12.3 mm
External dimensions/packaging: SOT-227
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Vishay Siliconix | 类似代替 | SOT-227 |
16A 至 330A,Vishay Semiconductor ### 二极管和整流器,Vishay Semiconductor
|
||
VS-UFB200FA20P
|
Vishay Semiconductor | 类似代替 | SOT-227-4 |
16A 至 330A,Vishay Semiconductor ### 二极管和整流器,Vishay Semiconductor
|
||
VS-UFB200FA20P
|
VISHAY | 类似代替 | SOT-227 |
16A 至 330A,Vishay Semiconductor ### 二极管和整流器,Vishay Semiconductor
|
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