Technical parameters/dissipated power: 625000 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 625000 mW
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-227
External dimensions/packaging: SOT-227
Physical parameters/operating temperature: -40℃ ~ 150℃
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
VS-GB100DA60UP
|
VISHAY | 类似代替 | SOT-227 |
VISHAY VS-GB100DA60UP IGBT Array & Module Transistor, NPN, 125A, 2.4V, 447W, 600V, SOT-227
|
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