Technical parameters/dissipated power: 250 mW
Technical parameters/leakage source breakdown voltage: 5 V
Technical parameters/breakdown voltage of gate source: ±5 V
Technical parameters/gain: 11 dB
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: 0402
External dimensions/packaging: 0402
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
VMMK-1225-BLKG
|
AVAGO Technologies | 完全替代 | 0402 |
射频结栅场效应晶体管(RF JFET)晶体管 LNA FET in Microcap DC-18GHz
|
||
VMMK-1225-BLKG
|
AVAGO Technologies | 完全替代 | 0402 |
射频结栅场效应晶体管(RF JFET)晶体管 LNA FET in Microcap DC-18GHz
|
||
VMMK-1225-TR1G
|
Broadcom | 类似代替 | 0402 |
Trans JFET 5V 50mA 3Pin SMD T/R
|
||
VMMK-1225-TR1G
|
AVAGO Technologies | 类似代替 | 0402 |
Trans JFET 5V 50mA 3Pin SMD T/R
|
||
VMMK-1225-TR1G
|
Broadcom | 类似代替 | 0402 |
Trans JFET 5V 50mA 3Pin SMD T/R
|
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