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Model SST26VF016B-104I/MF

Description SST26VF016B/032B/064B Serial quad input/output (SQI) SuperFlash ® The SST26VF016B/032B/064B series devices from Microchip are serial four-way I/O devices ™ (SQI ™) SuperFlash ® Storage IC with six wire, 4-bit input/output interfaces, allowing low-power, high-performance operations to be performed in a compact low pin technology package. Microchip SQI ™ The use of interfaces enables performance up to 104 MHz and implements low latency execute in place (XIP) functionality with minimal processor buffer storage. These flash memory chips also support full command set functionality for the traditional Serial Peripheral Interface (SPI) protocol. By using SuperFlash ® Technology, these devices can provide excellent erase time, which is very advantageous compared to other flash backup devices. Sector and block erase commands are typically completed within 18 ms, while full chip erase operations typically take 35 ms. # # # Features Serial interface architecture - Half Byte Multiplexing input/output, with SPI serial command structure x1/x2/x4 Serial Peripheral Interface (SPI) protocol, high-speed clock frequency - Maximum 104 MHz burst mode, low power consumption - Active read 15 mA (typical at 104 MHz), standby 15 μ A (typical) Fast erase time - Sector/block erase: 18 ms (typical); Chip erase 35 ms (typical) flexible erase capability software write protection # # flash memory, Microchip

Brand: Microchip

Packaging WDFN-8

Delivery time

Packaging method Tube

Standard packaging quantity 1

5+:

$ 17.0645

50+:

$ 16.3352

200+:

$ 15.9268

500+:

$ 15.8247

1000+:

$ 15.7226

2500+:

$ 15.6060

5000+:

$ 15.5330

7500+:

$ 15.4601

Price	$ 17.0645	$ 16.3352	$ 15.9268	$ 15.8247	$ 15.7226
Start batch production	5+	50+	200+	500+	1000+

Freight charges： In stock Freight rate：$13.00

Quantity：

Inventory(4241) Minimum order quantity(5)

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Technical parameters/working voltage: 2.7V ~ 3.6V

Technical parameters/number of pins: 8

Technical parameters/clock frequency: 104 MHz

Technical parameters/access time (Max): 8 ns

Technical parameters/operating temperature (Max): 85 ℃

Technical parameters/operating temperature (Min): -40 ℃

Technical parameters/power supply voltage: 2.7V ~ 3.6V

Technical parameters/power supply voltage (Max): 3.6 V

Technical parameters/power supply voltage (Min): 2.7 V

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: WDFN-8

External dimensions/length: 6 mm

External dimensions/width: 5 mm

External dimensions/height: 0.8 mm

External dimensions/packaging: WDFN-8

Physical parameters/operating temperature: -40℃ ~ 85℃

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tube

Other/Manufacturing Applications: medical

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: 3A991.b.1.a

Alternative material

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SST26VF016B-104I/SM	Silicon Strorage Technology	完全替代	SOIJ-8	SST26VF016B/032B/064B 串行四路输入/输出 (SQI) SuperFlash® 存储器 Microchip 的 SST26VF016B/032B/064B 系列设备是串行四路 I/O™ (SQI™) SuperFlash® 存储 IC，具有六线、4 位输入/输出接口，允许在紧凑型低引脚技术封装中执行低功率、高性能操作。 Microchip SQI™ 接口的使用使性能高达 104 MHz 并实现低延时 execute-in-place (XIP) 功能，带最小处理器缓冲存储。这些闪存芯片还支持全命令集功能，用于传统串行外围接口 (SPI) 协议。通过使用 SuperFlash® 技术，这些设备可提供卓越的擦除时间，与其他闪存备选设备相比，非常有利。扇区和块擦除命令通常在18 ms 内完成，全芯片擦除操作通常需要 35 ms。 ### 特点串行接口体系结构 - 半字节多路复用输入/输出，带 SPI 串行命令结构 x1/x2/x4 串行外围接口 (SPI) 协议高速时钟频率 - 最大 104 MHz 脉冲串模式低功耗 – 有源读取 15 mA（104 MHz 时典型），待机 15 μA（典型）快速擦除时间 - 扇区/块擦除：18 ms（典型）；芯片擦除 35 ms（典型）灵活的擦除能力软件写入保护 ### 闪存，Microchip
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