Technical parameters/number of channels: 2
Technical parameters/polarity: N+P
Technical parameters/dissipated power: 900 mW
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 3A/2.5A
Technical parameters/rise time: 7.5 ns
Technical parameters/Input capacitance (Ciss): 505pF @20V(Vds)
Technical parameters/rated power (Max): 1 W
Technical parameters/descent time: 22 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 900 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SMD-8
External dimensions/length: 2.9 mm
External dimensions/width: 2.3 mm
External dimensions/height: 0.75 mm
External dimensions/packaging: SMD-8
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
VEC2616-TL-H
|
ON Semiconductor | 功能相似 | SMD-8 |
Small Signal Field-Effect Transistor
|
||
VEC2616-TL-H
|
Sanyo Semiconductor | 功能相似 |
Small Signal Field-Effect Transistor
|
|||
VEC2616-TL-W
|
ON Semiconductor | 功能相似 | SOT-28 |
ON SEMICONDUCTOR VEC2616-TL-W 双路场效应管, MOSFET, N和P, 3 A, 60 V, 0.062 ohm, 10 V, 2.6 V 新
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