Technical parameters/forward voltage: 0.79V @10A
Technical parameters/Maximum reverse voltage (Vrrm): 100 V
Technical parameters/forward current: 20 A
Technical parameters/Maximum forward surge current (Ifsm): 150 A
Technical parameters/forward voltage (Max): 790 mV
Technical parameters/forward current (Max): 20 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -40 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263
External dimensions/length: 10.45 mm
External dimensions/width: 9.14 mm
External dimensions/height: 4.83 mm
External dimensions/packaging: TO-263
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MBR20100CT-E3/4W
|
Vishay Semiconductor | 功能相似 | TO-220-3 |
TMBS - Trench MOS 势垒肖特基整流器，高达 20A，Vishay Semiconductor Vishay 的 Trench MOS 势垒肖特基 (TMBS) 整流器系列包含专利 Trench 结构。 与平面肖特基整流器相比，TMBS 整流器可提供多个优势。 工作电压为 45V 及更高时平面肖特基整流器就失去了其快速转换速度的优势，且低正向压降到极度程度。 专利型 TMBS 结构通过少量缩减向漂移区域的载体注入来解决这些问题，从而最大程度减少积累电荷并提高转换速度。 ### 特点 专利 Trench 结构 提高交流/直流开关模式电源和直流/直流转换器的效率 高功率密度和低正向电压 ### 肖特基整流器，Vishay Semiconductor
|
||
MBR20100CTP
|
ON Semiconductor | 功能相似 | CASE 221A-09 |
MBR 系列 (2x) 10 A 100 V 共阴极 肖特基 势垒 整流器 - TO-220AB
|
||
MBR20100CTP
|
Diodes | 功能相似 | TO-220-3 |
MBR 系列 (2x) 10 A 100 V 共阴极 肖特基 势垒 整流器 - TO-220AB
|
||
VB20100C-E3/8W
|
Vishay Semiconductor | 类似代替 | TO-263-3 |
双高压Trench MOS势垒肖特基整流器超低VF = 0.50 V在IF = 5 A Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review