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Model VB30120SG-E3/8W
Description High voltage Trench MOS barrier Schottky rectifier with ultra-low VF=0.47 V IF = 5 A High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A
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Brand: VISHAY
Packaging TO-263
Delivery time
Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1408) Minimum order quantity(1)
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Technical parameters/forward voltage: 1.28 V

Technical parameters/Maximum reverse voltage (Vrrm): 120 V

Technical parameters/forward current: 30 A

Technical parameters/Maximum forward surge current (Ifsm): 220 A

Encapsulation parameters/Encapsulation: TO-263

External dimensions/packaging: TO-263

Other/Minimum Packaging: 800

Compliant with standards/RoHS standards: Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
VB30120SG-E3/4W VB30120SG-E3/4W VISHAY 完全替代 TO-263-3
高压Trench MOS势垒肖特基整流器超低VF = 0.47 V在IF = 5 A High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A
PDF
VB30120SG-E3/4W VB30120SG-E3/4W Vishay Semiconductor 完全替代 TO-263-3
高压Trench MOS势垒肖特基整流器超低VF = 0.47 V在IF = 5 A High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A
PDF

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