Technical parameters/forward voltage: 1.28 V
Technical parameters/Maximum reverse voltage (Vrrm): 120 V
Technical parameters/forward current: 30 A
Technical parameters/Maximum forward surge current (Ifsm): 220 A
Technical parameters/forward voltage (Max): 1.28 V
Technical parameters/forward current (Max): 30 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -40 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.54 mm
External dimensions/width: 4.7 mm
External dimensions/height: 15.32 mm
External dimensions/packaging: TO-220-3
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
VI30120SG-E3/4W
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Vishay Semiconductor | 类似代替 | TO-262-3 |
高压Trench MOS势垒肖特基整流器超低VF = 0.47 V在IF = 5 A High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A
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VISHAY | 类似代替 | TO-262 |
高压Trench MOS势垒肖特基整流器超低VF = 0.47 V在IF = 5 A High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A
|
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