Technical parameters/forward voltage: 1.3 V
Technical parameters/reverse recovery time: 50 ns
Technical parameters/Maximum reverse voltage (Vrrm): 400 V
Technical parameters/forward current: 8 A
Technical parameters/maximum reverse leakage current (Ir): 10 uA
Encapsulation parameters/Encapsulation: TO-263
External dimensions/packaging: TO-263
Compliant with standards/RoHS standards: Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
VISHAY | 完全替代 | TO-220-3 |
高压Trench MOS势垒肖特基整流器 High-Voltage Trench MOS Barrier Schottky Rectifier
|
||
V20150SG-E3/4W
|
Vishay Semiconductor | 完全替代 | TO-220-3 |
高压Trench MOS势垒肖特基整流器 High-Voltage Trench MOS Barrier Schottky Rectifier
|
||
V20150SGHM3/4W
|
Vishay Semiconductor | 完全替代 | TO-220-3 |
Diode Schottky 150V 20A 3Pin(3+Tab) TO-220AB Tube
|
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