Technical parameters/forward voltage: 680mV @10A
Technical parameters/forward current: 10 A
Technical parameters/Maximum forward surge current (Ifsm): 180 A
Technical parameters/forward voltage (Max): 680mV @10A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 40 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-277
External dimensions/length: 6.65 mm
External dimensions/width: 4.75 mm
External dimensions/height: 1.2 mm
External dimensions/packaging: TO-277
Physical parameters/operating temperature: 40℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
V10P10-M3/86A
|
Vishay Semiconductor | 类似代替 | TO-277 |
VISHAY V10P10-M3/86A. 肖特基整流器, 单, 100 V, 10 A, TO-277A, 3 引脚, 620 mV
|
||
V10P10HM3/86A
|
Vishay Semiconductor | 类似代替 | TO-277 |
高电流密度表面贴装Trench MOS势垒肖特基整流器 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
|
||
V10P10HM3/86A
|
VISHAY | 类似代替 | TO-277 |
高电流密度表面贴装Trench MOS势垒肖特基整流器 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
|
||
V10P10HM3/87A
|
VISHAY | 类似代替 | SOT-227 |
高电流密度表面贴装Trench MOS势垒肖特基整流器 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
|
||
V10P10HM3/87A
|
Vishay Semiconductor | 类似代替 | TO-277 |
高电流密度表面贴装Trench MOS势垒肖特基整流器 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
|
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