Technical parameters/dissipated power: 80000 mW
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 80000 mW
Encapsulation parameters/installation method: Chassis
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: JV-55
External dimensions/packaging: JV-55
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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|
Vishay Semiconductor | 功能相似 | DO-220AA |
RF Power Bipolar Transistor, 2-Element, Ultra High Frequency Band, Silicon, NPN, 55JV, 4 PIN
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Microsemi | 功能相似 | JV-55 |
RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN, FM-4
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Advanced Semiconductor | 功能相似 |
RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN, FM-4
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