Technical parameters/rated voltage (DC): 50.0 V
Technical parameters/rated current: 100 mA
Technical parameters/rated power: 0.15 W
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 0.15 W
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 68 @5mA, 5V
Technical parameters/rated power (Max): 150 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/gain bandwidth: 250 MHz
Technical parameters/dissipated power (Max): 150 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 5
Encapsulation parameters/Encapsulation: TSSOP-5
External dimensions/packaging: TSSOP-5
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
EMG5T2R
|
ROHM Semiconductor | 类似代替 | SMD-6 |
NPN 100毫安50V复杂的数字晶体管(偏置电阻内置晶体管) NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
|
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