Technical parameters/rated voltage (DC): -50.0 V
Technical parameters/rated current: -100 mA
Technical parameters/rated power: 0.15 W
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 150 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 100 @1mA, 5V
Technical parameters/rated power (Max): 150 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/gain bandwidth: 250 MHz
Technical parameters/dissipated power (Max): 150 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SOT-363-6
External dimensions/length: 2 mm
External dimensions/width: 1.25 mm
External dimensions/height: 0.9 mm
External dimensions/packaging: SOT-363-6
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Not Recommended for New Design
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DDA143TU-7
|
Diodes | 功能相似 | SOT-363-6 |
Trans Digital BJT PNP 50V 100mA 200mW Automotive 6Pin SOT-363 T/R
|
||
IMB3AT110
|
ROHM Semiconductor | 类似代替 | SOT-457 |
IMB3A 系列 50 V 100 mA 表面贴装 双 PNP 数字 晶体管 - SC-74
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review