Chip AI consultant
Technical parameters/number of output interfaces: 7
Technical parameters/number of channels: 7
Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical Parameters/Drivers/Packages: 7
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/input voltage (Max): 5 V
Technical parameters/output voltage (Max): 50 V
Technical parameters/output current (Max): 500 mA
Technical parameters/DC current gain (hFE): 1000
Technical parameters/operating temperature (Max): 70 ℃
Technical parameters/operating temperature (Min): -20 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 16
Encapsulation parameters/Encapsulation: SOIC-16
External dimensions/length: 9.9 mm
External dimensions/width: 3.91 mm
External dimensions/height: 1.58 mm
External dimensions/packaging: SOIC-16
Physical parameters/operating temperature: -20℃ ~ 70℃ (TA)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ULN2003ADG4
|
TI | 完全替代 | SOIC-16 |
高压大电流达林顿晶体管阵列 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAY
|
||
ULN2003ADR
|
TI | 完全替代 | SOIC-16 |
TEXAS INSTRUMENTS ULN2003ADR 双极晶体管阵列, NPN, 50 V, 500 mA, SOIC
|
||
ULN2003ADR
|
Chipswinner | 完全替代 |
TEXAS INSTRUMENTS ULN2003ADR 双极晶体管阵列, NPN, 50 V, 500 mA, SOIC
|
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