Technical parameters/frequency: 4 GHz
Technical parameters/rated voltage (DC): 3.00 V
Technical parameters/rated current: 40 mA
Technical parameters/dissipated power: 180 mW
Technical parameters/drain source voltage (Vds): 3.00 V
Technical parameters/Continuous drain current (Ids): 40.0 mA
Technical parameters/output power: 5 dBm
Technical parameters/gain: 10 dB
Technical parameters/test current: 15 mA
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/rated voltage: 3 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SOT-363
External dimensions/packaging: SOT-363
Physical parameters/operating temperature: -65℃ ~ 150℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ATF-36163-TR1G
|
AVAGO Technologies | 完全替代 | SOT-363 |
射频结栅场效应晶体管(RF JFET)晶体管 Transistor GaAs High Frequency
|
||
ATF-36163-TR1G
|
Agilent | 完全替代 | SC-70 |
射频结栅场效应晶体管(RF JFET)晶体管 Transistor GaAs High Frequency
|
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