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Technical parameters/power supply voltage (DC): 15.0V (max)
Technical parameters/rise/fall time: 20 ns
Technical parameters/number of output interfaces: 1
Technical parameters/output voltage: 150 mV
Technical parameters/output current: 9 A
Technical parameters/number of pins: 8
Technical parameters/dissipated power: 650 mW
Technical parameters/rise time: 35 ns
Technical parameters/descent time: 20 ns
Technical parameters/descent time (Max): 30 ns
Technical parameters/rise time (Max): 70 ns
Technical parameters/operating temperature (Max): 70 ℃
Technical parameters/operating temperature (Min): 0 ℃
Technical parameters/dissipated power (Max): 650 mW
Technical parameters/power supply voltage: 4V ~ 15V
Technical parameters/power supply voltage (Max): 15 V
Technical parameters/power supply voltage (Min): 4 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.91 mm
External dimensions/height: 1.58 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: 0℃ ~ 70℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
UCC37321D
|
TI | 完全替代 | SOIC-8 |
MOSFET & IGBT Drivers, 6A to 10A, Texas Instruments Texas Instruments 专用栅极驱动器 IC 系列适用于 MOSFET 和 IGBT 应用。 设备可提供适合与 MOSFET 和 IGBT 电源设备兼容的高电流输出，且提供各种配置和封装类型。 ### MOSFET & IGBT 驱动器，Texas Instruments
|
||
UCC37321DG4
|
TI | 类似代替 | SOIC-8 |
单9 ，高速低侧MOSFET驱动器与启用 SINGLE 9-A HIGH SPEED LOW- SIDE MOSFET DRIVER WITH ENABLE
|
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