Chip AI consultant
Technical parameters/power supply voltage (DC): 4.70V (min)
Technical parameters/rise/fall time: 85 ns
Technical parameters/number of output interfaces: 1
Technical parameters/output current: 6.00 A
Technical parameters/number of pins: 8
Technical parameters/dissipated power: 1 W
Technical parameters/rise time: 70 ns
Technical parameters/descent time: 80 ns
Technical parameters/descent time (Max): 80 ns
Technical parameters/rise time (Max): 70 ns
Technical parameters/operating temperature (Max): 70 ℃
Technical parameters/operating temperature (Min): 0 ℃
Technical parameters/dissipated power (Max): 1000 mW
Technical parameters/power supply voltage: 4.7V ~ 18V
Technical parameters/power supply voltage (Max): 18 V
Technical parameters/power supply voltage (Min): 4.7 V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PDIP-8
External dimensions/packaging: PDIP-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
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Unitrode | 类似代替 | DIP |
MOSFET & IGBT Drivers, 6A to 10A, Texas Instruments Texas Instruments 专用栅极驱动器 IC 系列适用于 MOSFET 和 IGBT 应用。 设备可提供适合与 MOSFET 和 IGBT 电源设备兼容的高电流输出，且提供各种配置和封装类型。 ### MOSFET & IGBT 驱动器，Texas Instruments
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UC3710N
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TI | 类似代替 | PDIP-8 |
MOSFET & IGBT Drivers, 6A to 10A, Texas Instruments Texas Instruments 专用栅极驱动器 IC 系列适用于 MOSFET 和 IGBT 应用。 设备可提供适合与 MOSFET 和 IGBT 电源设备兼容的高电流输出，且提供各种配置和封装类型。 ### MOSFET & IGBT 驱动器，Texas Instruments
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