Chip AI consultant
Technical parameters/power supply voltage (DC): 5.00V (min)
Technical parameters/rise/fall time: 60 ns
Technical parameters/number of output interfaces: 1
Technical parameters/dissipated power: 3 W
Technical parameters/rise time: 90 ns
Technical parameters/output current (Max): 1.5 A
Technical parameters/descent time: 60 ns
Technical parameters/descent time (Max): 60 ns
Technical parameters/rise time (Max): 90 ns
Technical parameters/operating temperature (Max): 70 ℃
Technical parameters/operating temperature (Min): 0 ℃
Technical parameters/dissipated power (Max): 3000 mW
Technical parameters/power supply voltage: 5V ~ 40V
Technical parameters/power supply voltage (Max): 40 V
Technical parameters/power supply voltage (Min): 5 V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 5
Encapsulation parameters/Encapsulation: TO-220-5
External dimensions/packaging: TO-220-5
Physical parameters/operating temperature: 0℃ ~ 70℃ (TA)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
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Unitrode | 类似代替 |
MOSFET 和 IGBT 驱动器，高达 2.5A，Texas Instruments Texas Instruments 专用栅极驱动器 IC 系列适用于 MOSFET 和 IGBT 应用。 设备可提供适合与 MOSFET 和 IGBT 电源设备兼容的高电流输出，且提供各种配置和封装类型。 ### MOSFET & IGBT 驱动器，Texas Instruments
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UC3705T
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TI | 类似代替 | TO-220-5 |
MOSFET 和 IGBT 驱动器，高达 2.5A，Texas Instruments Texas Instruments 专用栅极驱动器 IC 系列适用于 MOSFET 和 IGBT 应用。 设备可提供适合与 MOSFET 和 IGBT 电源设备兼容的高电流输出，且提供各种配置和封装类型。 ### MOSFET & IGBT 驱动器，Texas Instruments
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