Technical parameters/rise/fall time: 20 ns
Technical parameters/number of output interfaces: 2
Technical parameters/dissipated power: 1 W
Technical parameters/rise time: 80 ns
Technical parameters/output current (Max): 1.5 A
Technical parameters/descent time: 80 ns
Technical parameters/descent time (Max): 80 ns
Technical parameters/rise time (Max): 80 ns
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 1000 mW
Technical parameters/power supply voltage: 5V ~ 40V
Technical parameters/power supply voltage (Min): 5 V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PDIP-8
External dimensions/packaging: PDIP-8
Physical parameters/operating temperature: -55℃ ~ 125℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
UC3709N
|
TI | 类似代替 | PDIP-8 |
TEXAS INSTRUMENTS UC3709N 芯片, MOSFET驱动器, 双路
|
||
|
|
Unitrode | 类似代替 | DIP |
TEXAS INSTRUMENTS UC3709N 芯片, MOSFET驱动器, 双路
|
||
UC3711N
|
TI | 完全替代 | PDIP |
双超高速FET驱动器 Dual Ultra High-Speed FET Driver
|
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