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Model 7MBR25UA-120-50
Description IGBT Discrete, Fuji Electric IGBT discrete components and modules, Fuji Electric insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.
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Brand: FUJI
Packaging MODULE
Delivery time
Packaging method
Standard packaging quantity 1
502.56  yuan 502.56yuan
1+:
$ 572.9138
10+:
$ 552.8116
50+:
$ 550.2988
100+:
$ 547.7860
150+:
$ 543.7656
250+:
$ 540.2477
500+:
$ 536.7298
1000+:
$ 532.7094
Quantity
1+
10+
50+
100+
150+
Price
$572.9138
$552.8116
$550.2988
$547.7860
$543.7656
Price $ 572.9138 $ 552.8116 $ 550.2988 $ 547.7860 $ 543.7656
Start batch production 1+ 10+ 50+ 100+ 150+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9969) Minimum order quantity(1)
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Technical parameters/polarity: N-Channel

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/dissipated power (Max): 115 W

Encapsulation parameters/installation method: PCB

Package parameters/number of pins: 24

Encapsulation parameters/Encapsulation: Module

External dimensions/length: 107.5 mm

External dimensions/width: 45 mm

External dimensions/height: 17 mm

External dimensions/packaging: Module

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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