Technical parameters/tolerances: ±5 %
Technical parameters/forward voltage: 1.5V @200mA
Technical parameters/dissipated power: 500 mW
Technical parameters/test current: 5 mA
Technical parameters/voltage regulation value: 3.9 V
Technical parameters/rated power (Max): 500 mW
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: SOD-80-2
External dimensions/length: 3.7 mm
External dimensions/width: 1.6 mm
External dimensions/height: 1.6 mm
External dimensions/packaging: SOD-80-2
Physical parameters/operating temperature: -65℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBD7000
|
Infineon | 功能相似 |
Diode Ultra Fast Recovery Rectifier 100V 0.2A 3Pin SOT-23 T/R
|
|||
MMBD7000
|
ChendaHang | 功能相似 | SOT-23 |
Diode Ultra Fast Recovery Rectifier 100V 0.2A 3Pin SOT-23 T/R
|
||
MMBD7000
|
Diodes | 功能相似 | SOT-23 |
Diode Ultra Fast Recovery Rectifier 100V 0.2A 3Pin SOT-23 T/R
|
||
MMBD7000
|
National Semiconductor | 功能相似 |
Diode Ultra Fast Recovery Rectifier 100V 0.2A 3Pin SOT-23 T/R
|
|||
|
|
YONGYUTAI | 功能相似 | SOT-23 |
Diode Ultra Fast Recovery Rectifier 100V 0.2A 3Pin SOT-23 T/R
|
||
MMBD7000
|
Taitron | 功能相似 |
Diode Ultra Fast Recovery Rectifier 100V 0.2A 3Pin SOT-23 T/R
|
|||
|
|
Motorola | 功能相似 | CASE 318-07 |
Diode Ultra Fast Recovery Rectifier 100V 0.2A 3Pin SOT-23 T/R
|
||
TZMC3V9-GS08
|
Vishay Small Signal | 功能相似 |
500mW,TZM 系列,Vishay Semiconductor Vishay 的表面安装 (SMT) 齐纳二极管额定值为 500mW,击穿电压范围从 3.3 至 75V ### 齐纳二极管,Vishay Semiconductor
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review