Technical parameters/frequency: 0.2 MHz
Technical parameters/power supply voltage (DC): 10.0V (min)
Technical parameters/rise/fall time: 15ns, 10ns
Technical parameters/number of output interfaces: 1
Technical parameters/number of pins: 8
Technical parameters/dissipated power: 0.625 W
Technical parameters/rise time: 400 ns
Technical parameters/descent time: 150 ns
Technical parameters/descent time (Max): 150 ns
Technical parameters/rise time (Max): 400 ns
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 625 mW
Technical parameters/power supply voltage: 10V ~ 20V
Technical parameters/power supply voltage (Max): 20 V
Technical parameters/power supply voltage (Min): 10 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/width: 4.01 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FAN7081M_GF085
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ON Semiconductor | 类似代替 |
该FAN7081_GF085是高侧栅极驱动器IC，设计用于高电压和MOSFET或IGBT ，它运行在高达600V的高速行驶。 The FAN7081_GF085 is a high-side gate drive IC designed for high voltage and high speed driving of MOSFET or IGBT, which operate up to 600V.
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