Technical parameters/rise/fall time: 38ns, 24ns
Technical parameters/number of channels: 1
Technical parameters/forward voltage: 1.43 V
Technical parameters/input current: 16 mA
Technical parameters/dissipated power: 295 mW
Technical parameters/rise time: 38 ns
Technical parameters/isolation voltage: 5000 Vrms
Technical parameters/forward current: 25 mA
Technical parameters/input current (Min): 25 mA
Technical parameters/breakdown voltage: 5 V
Technical parameters/forward voltage (Max): 1.8 V
Technical parameters/forward current (Max): 25 mA
Technical parameters/descent time: 24 ns
Technical parameters/descent time (Max): 24 ns
Technical parameters/rise time (Max): 38 ns
Technical parameters/operating temperature (Max): 100 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 295 mW
Technical parameters/power supply voltage: 15V ~ 30V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SMD-8
External dimensions/length: 9.91 mm
External dimensions/width: 6.86 mm
External dimensions/height: 3.94 mm
External dimensions/packaging: SMD-8
Physical parameters/operating temperature: -40℃ ~ 100℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FOD3184TSR2
|
ON Semiconductor | 完全替代 | SMD-8 |
逻辑输出光电耦合器 High Speed 3A OUT MOSFET/IGBT GateDrvr
|
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