Technical parameters/working voltage: 10.2 V
Technical parameters/breakdown voltage: 11.4 V
Technical parameters/clamp voltage: 16.7 V
Technical parameters/peak pulse power: 600 W
Technical parameters/minimum reverse breakdown voltage: 11.4 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-214AA
External dimensions/length: 4.57 mm
External dimensions/packaging: DO-214AA
Physical parameters/operating temperature: -65℃ ~ 185℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Automotive grade
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
P6SMB12A-E3/52
|
VISHAY | 完全替代 | DO-214AA |
TRANSZORB® 瞬态电压抑制器 SMT 单向 600W,P6SMB 系列,Vishay Semiconductor ### 瞬态电压抑制器,Vishay Semiconductor
|
||
P6SMB12A-E3/52
|
Vishay Semiconductor | 完全替代 | DO-214AA |
TRANSZORB® 瞬态电压抑制器 SMT 单向 600W,P6SMB 系列,Vishay Semiconductor ### 瞬态电压抑制器,Vishay Semiconductor
|
||
P6SMB12A-E3/52
|
Vishay Siliconix | 完全替代 | 2 |
TRANSZORB® 瞬态电压抑制器 SMT 单向 600W,P6SMB 系列,Vishay Semiconductor ### 瞬态电压抑制器,Vishay Semiconductor
|
||
P6SMB12AHE3/5B
|
VISHAY | 完全替代 | DO-214AA |
Diode TVS Single Uni-Dir 10.2V 600W 2Pin SMB T/R
|
||
TPSMB12AHE3/5BT
|
Vishay Semiconductor | 完全替代 | DO-214AA |
Diode TVS Single Uni-Dir 10.2V 600W Automotive 2Pin SMB T/R
|
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