Technical parameters/power supply voltage (DC): 4.00V (min)
Technical parameters/rise/fall time: 14ns, 15ns
Technical parameters/number of output interfaces: 2
Technical parameters/dissipated power: 1.09 W
Technical parameters/rise time: 35 ns
Technical parameters/descent time: 35 ns
Technical parameters/descent time (Max): 35 ns
Technical parameters/rise time (Max): 35 ns
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 1090 mW
Technical parameters/power supply voltage: 4V ~ 14V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PDIP-8
External dimensions/packaging: PDIP-8
Physical parameters/operating temperature: -40℃ ~ 125℃ (TA)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
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ROHM Semiconductor | 完全替代 |
MOSFET 和 IGBT 驱动器,高达 2.5A,Texas Instruments Texas Instruments 专用栅极驱动器 IC 系列适用于 MOSFET 和 IGBT 应用。 设备可提供适合与 MOSFET 和 IGBT 电源设备兼容的高电流输出,且提供各种配置和封装类型。 ### MOSFET & IGBT 驱动器,Texas Instruments
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