Technical parameters/frequency: 2 MHz
Technical parameters/rise/fall time: 10 ns
Technical parameters/number of output interfaces: 2
Technical parameters/output current: 6 A
Technical parameters/dissipated power: 1250 mW
Technical parameters/rise time: 10 ns
Technical parameters/descent time: 5 ns
Technical parameters/descent time (Max): 10 ns
Technical parameters/rise time (Max): 10 ns
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 1250 mW
Technical parameters/power supply voltage: 6.8V ~ 8.8V
Technical parameters/power supply voltage (Max): 8.8 V
Technical parameters/power supply voltage (Min): 4 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 125℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TPS28226D
|
TI | 类似代替 | SOIC-8 |
MOSFET 和 IGBT 半桥栅极驱动器,Texas Instruments ### MOSFET & IGBT 驱动器,Texas Instruments
|
||
|
|
TI | 类似代替 | SOIC-8 |
8Pin High Frequency 4A Sink Synchronous MOSFET Driver 8-SOIC -40℃ to 125℃
|
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