Technical parameters/rated voltage (DC): -15.0 V
Technical parameters/rated current: -1.27 mA
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 180 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 0.504 W
Technical parameters/drain source voltage (Vds): 15 V
Technical parameters/leakage source breakdown voltage: 15 V
Technical parameters/Continuous drain current (Ids): 400 mA
Technical parameters/rise time: 10 ns
Technical parameters/descent time: 2 ns
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): 40 ℃
Technical parameters/dissipated power (Max): 504mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: TSSOP-8
External dimensions/length: 4.4 mm
External dimensions/width: 3 mm
External dimensions/height: 1.2 mm
External dimensions/packaging: TSSOP-8
Physical parameters/operating temperature: -40℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TPS1100PW
|
TI | 类似代替 | TSSOP-8 |
单P沟道增强型MOSFET SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
|
||
TPS1100PWG4
|
TI | 类似代替 | TSSOP-8 |
单P沟道增强型MOSFET SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
|
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