Technical parameters/dissipated power: 100 mW
Technical parameters/drain source voltage (Vds): 50 V
Technical parameters/leakage source breakdown voltage: 10 V
Technical parameters/breakdown voltage of gate source: 50 V
Technical parameters/breakdown voltage: 50 V
Technical parameters/Input capacitance (Ciss): 13pF @10V(Vds)
Technical parameters/rated power (Max): 100 mW
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 100 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-323
External dimensions/packaging: SOT-323
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 125℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
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