Technical parameters/drain source resistance: 12.0 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.00 W
Technical parameters/leakage source breakdown voltage: 400 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 175 mA
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-92
External dimensions/packaging: TO-92
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
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