Technical parameters/dissipated power: 1 W
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/rise time: 8 ns
Technical parameters/Input capacitance (Ciss): 150pF @25V(Vds)
Technical parameters/descent time: 20 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/packaging: TO-92-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TN0620N3-G
|
Microchip | 完全替代 | TO-92-3 |
晶体管, MOSFET, N沟道, 250 mA, 200 V, 4 ohm, 10 V, 1.6 V
|
||
TN0620N3-G
|
Supertex | 完全替代 | TO-92-3 |
晶体管, MOSFET, N沟道, 250 mA, 200 V, 4 ohm, 10 V, 1.6 V
|
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