Technical parameters/dissipated power: 1W (Tc)
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/rise time: 7 ns
Technical parameters/Input capacitance (Ciss): 70pF @20V(Vds)
Technical parameters/descent time: 5 ns
Technical parameters/dissipated power (Max): 1W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TN0104N3-G
|
Supertex | 类似代替 | TO-92-3 |
晶体管, MOSFET, N沟道, 450 mA, 40 V, 1.5 ohm, 10 V, 1.6 V
|
||
TN0104N3-G
|
Microchip | 类似代替 | TO-92-3 |
晶体管, MOSFET, N沟道, 450 mA, 40 V, 1.5 ohm, 10 V, 1.6 V
|
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