Technical parameters/dissipated power: 150 mW
Technical parameters/dissipated power (Max): 150 mW
Encapsulation parameters/Encapsulation: DO-204AH
External dimensions/packaging: DO-204AH
Physical parameters/operating temperature: -60℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Advanced Semiconductor | 功能相似 |
Schottky Barrier Diode
|
|||
5082-2810
|
HP | 功能相似 |
Schottky Barrier Diode
|
|||
5082-2810
|
New Jersey Semiconductor | 功能相似 |
Schottky Barrier Diode
|
|||
BAT19
|
ST Microelectronics | 功能相似 |
SILICON, UHF BAND, MIXER DIODE, DO-35
|
|||
NTE584
|
NTE Electronics | 功能相似 | DO-35 |
Diode Schottky 20V 0.035A 2Pin DO-35
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review